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STMicroelectronics ST8L60 Type N-Channel Single MOSFETs, 39 A, 600 V Enhancement, 5-Pin PowerFLAT ST8L60N065DM9

RS 제품 번호:: 648-108
제조사 부품 번호:: ST8L60N065DM9
제조업체:: STMicroelectronics

STMicroelectronics ST8L60 Type N-Channel Single MOSFETs, 39 A, 600 V Enhancement, 5-Pin PowerFLAT ST8L60N065DM9

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₩8,576.56

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추가로 2026년 2월 09일 부터 299 개 단위 배송

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RS 제품 번호:: 648-108
제조사 부품 번호:: ST8L60N065DM9
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	39A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerFLAT
	Series	ST8L60
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	202W
	Forward Voltage Vf	1.6V
	Typical Gate Charge Qg @ Vgs	66nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	0.95mm
	Standards/Approvals	No
	Width	8.10 mm
	Length	8.10mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 39A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerFLAT
	Series ST8L60
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 202W
	Forward Voltage Vf 1.6V
	Typical Gate Charge Qg @ Vgs 66nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 0.95mm
	Standards/Approvals No
	Width 8.10 mm
	Length 8.10mm
	Automotive Standard No

Datasheet - ST8L60N065DM9

COO (Country of Origin):: CN

The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Low gate charge

Low input capacitance and resistance

100 percent avalanche tested

Excellent switching performance

PowerFLAT 8x8 HV package

RoHS compliant

STMicroelectronics ST8L60 Type N-Channel Single MOSFETs, 39 A, 600 V Enhancement, 5-Pin PowerFLAT ST8L60N065DM9

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