STMicroelectronics ST8L65N0 N channel-Channel Power MOSFET, 44 A, 650 V N, 5-Pin PowerFlat HV ST8L65N065DM9
- RS 제품 번호:
- 762-552
- 제조사 부품 번호:
- ST8L65N065DM9
- 제조업체:
- STMicroelectronics
N
대량 구매 할인 기용 가능
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₩6,004.72
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- 300 개 단위 배송 준비 완료
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- RS 제품 번호:
- 762-552
- 제조사 부품 번호:
- ST8L65N065DM9
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | ST8L65N0 | |
| Package Type | PowerFlat HV | |
| Mount Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 223W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 8.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series ST8L65N0 | ||
Package Type PowerFlat HV | ||
Mount Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 223W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Standards/Approvals RoHS Compliant | ||
Length 8.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
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