STMicroelectronics Type N-Channel MOSFET, 25 A, 600 V Enhancement, 5-Pin PowerFLAT

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RS 제품 번호:
192-4659
제조사 부품 번호:
STL45N60DM6
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerFLAT

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

44nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

160W

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Height

0.9mm

Standards/Approvals

No

Width

8.1 mm

Length

8.1mm

Automotive Standard

No

COO (Country of Origin):
CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

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