ROHM R2P N-Channel Single MOSFETs, 2 A, 60 V Enhancement, 3-Pin MPT3 R2P020N06HZGT100
- RS 제품 번호:
- 646-553P
- 제조사 부품 번호:
- R2P020N06HZGT100
- 제조업체:
- ROHM
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대량 구매 할인 받기
250개 더 담고 ₩14,500.00 할인 받기
View bulk pricing optionsSubtotal 100 units (supplied on a continuous strip)*
₩56,600.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 절감 |
|---|---|---|
| 100 - 240 | ₩566.00 | - |
| 250 - 990 | ₩508.00 | ₩14,500.00 |
| 1000 - 4990 | ₩494.00 | ₩72,000.00 |
| 5000 + | ₩480.00 | ₩430,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 646-553P
- 제조사 부품 번호:
- R2P020N06HZGT100
- 제조업체:
- ROHM
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | MPT3 | |
| Series | R2P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Length | 4.3mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type MPT3 | ||
Series R2P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Length 4.3mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel 60 volt 2 ampere middle power metal oxide semiconductor field effect transistor features low on resistance and supports low voltage drive with 2 point 5 volt operation.
AEC-Q101 Qualified
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