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Infineon IMZC120 Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R034M2HXKSA1

RS 제품 번호:: 351-928
제조사 부품 번호:: IMZC120R034M2HXKSA1
제조업체:: Infineon

Infineon IMZC120 Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R034M2HXKSA1

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Subtotal (1 unit)*

₩25,041.60

재고있음

240 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩25,041.60
10 - 99	₩22,543.08
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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-928
제조사 부품 번호:: IMZC120R034M2HXKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	PG-TO-247-4-U07
	Series	IMZC120
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	89mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	244W
	Typical Gate Charge Qg @ Vgs	45nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	200°C
	Width	15.6 mm
	Standards/Approvals	JEDEC47/20/22
	Length	23.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 1200V
	Package Type PG-TO-247-4-U07
	Series IMZC120
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 89mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 244W
	Typical Gate Charge Qg @ Vgs 45nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 200°C
	Width 15.6 mm
	Standards/Approvals JEDEC47/20/22
	Length 23.1mm
	Automotive Standard No

Datasheet - IMZC120R034M2HXKSA1

The Infineon CoolSiC MOSFET discrete with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Better energy efficiency

Cooling optimization

Higher power density

New robustness features

Highly reliable

Easy paralleling

Infineon IMZC120 Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R034M2HXKSA1

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