Infineon IMZC120 Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R034M2HXKSA1

RS 제품 번호:: 351-928
제조사 부품 번호:: IMZC120R034M2HXKSA1
제조업체:: Infineon

Infineon IMZC120 Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R034M2HXKSA1

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 unit)*

₩27,440.00

240 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 9	₩27,440.00
10 - 99	₩24,700.00
100 +	₩22,760.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-928
제조사 부품 번호:: IMZC120R034M2HXKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	1200V
	Series	IMZC120
	Package Type	PG-TO-247-4-U07
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	89mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25V
	Typical Gate Charge Qg @ Vgs	45nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	244W
	Maximum Operating Temperature	200°C
	Length	23.1mm
	Width	15.6mm
	Standards/Approvals	JEDEC47/20/22
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 1200V
	Series IMZC120
	Package Type PG-TO-247-4-U07
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 89mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25V
	Typical Gate Charge Qg @ Vgs 45nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 244W
	Maximum Operating Temperature 200°C
	Length 23.1mm
	Width 15.6mm
	Standards/Approvals JEDEC47/20/22
	Automotive Standard No

Datasheet - IMZC120R034M2HXKSA1

Infineon IMZC120 Series MOSFET, 244W Maximum Power Dissipation, 1200V Maximum Drain Source Voltage - IMZC120R034M2HXKSA1

This MOSFET is a high-voltage switching transistor intended for power conversion and control in demanding industrial environments. It is an enhancement-mode N-channel device designed to handle elevated drain-source voltages and substantial continuous current, making it suitable for roles where robust high-voltage switching and thermal endurance are required.

Features and Benefits:

• 1200V Vds enables high-voltage system utilisation
• 55A continuous drain current supports heavy-load switching
• 89mΩ Rds(on) lowers conduction losses during operation
• 244W power dissipation allows sustained thermal throughput
• 45nC typical gate charge improves switching speed control

Applications

• Suitable for high-voltage inverter stages in industrial drives
• Ideal for power supplies requiring high-voltage switching
• Used with large motor controllers demanding high current handling
• Can be used for hard-switching topologies in converters

What package and mounting style does it use for assembly?

It is supplied in a PG-TO-247-4-U07 package configured for through-hole mounting to facilitate secure board attachment and robust thermal connection to heatsinks.

What temperature range can it tolerate during operation?

It operates across a wide span from -55°C up to 200°C, permitting use in extreme thermal conditions and elevated junction temperatures.

How many pins are present and what does this imply electrically?

The device has four pins, accommodating gate, drain and dual-source or tab arrangements typical of power MOSFET packages for flexible circuit integration.

Which industry standard tests apply to its qualification?

It conforms to JEDEC47/20/22 standards, indicating compliance with established thermal and mechanical reliability test protocols.