Infineon IMZC120 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R012M2HXKSA1

RS 제품 번호:: 351-922
제조사 부품 번호:: IMZC120R012M2HXKSA1
제조업체:: Infineon

Infineon IMZC120 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R012M2HXKSA1

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₩71,380.00

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RS 제품 번호:: 351-922
제조사 부품 번호:: IMZC120R012M2HXKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	91A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	PG-TO-247-4-U07
	Series	IMZC120
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	480W
	Typical Gate Charge Qg @ Vgs	124nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC47/20/22
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 91A
	Maximum Drain Source Voltage Vds 1200V
	Package Type PG-TO-247-4-U07
	Series IMZC120
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 480W
	Typical Gate Charge Qg @ Vgs 124nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25V
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC47/20/22
	Automotive Standard No

Datasheet - IMZC120R012M2HXKSA1

Infineon IMZC120 Series MOSFET, 1200V Maximum Drain Source Voltage, 91A Maximum Continuous Drain Current - IMZC120R012M2HXKSA1

This MOSFET is a high-voltage N-channel enhancement device designed for power switching and conversion in demanding environments. It is intended for through-hole mounting and suits applications needing robust drain-to-source voltage capability and substantial continuous current handling while operating across wide temperature ranges.

Features and Benefits:

• 1200V drain tolerance enables high-voltage switching
• 91A continuous drain current supports heavy load handling
• 12mΩ Rds(on) reduces conduction losses during operation
• 480W maximum dissipation allows sustained power handling
• 124nC typical gate charge balances switching speed and drive effort
• Through-hole 4-pin PG-TO-247-4-U07 package simplifies heatsinking

Applications

• Suitable for industrial high-voltage inverters
• Ideal for power supplies in telecoms equipment
• Used with motor drives requiring high-current switching
• Can be used for high-voltage DC-DC conversion modules
• Appropriate for laboratory power testing rigs

What gate-drive considerations should I account for?

Expect a typical gate charge of 124nC at rated Vgs, so design gate drivers capable of sourcing and sinking sufficient peak currents to meet desired switching transitions without excessive delay.

How does thermal management impact uptime at full load?

With a maximum power dissipation of 480W, effective heatsinking and thermal-interface design are necessary to maintain junction temperature within limits during prolonged high-power operation.

Are there restrictions on ambient operating temperature?

The device is specified to operate from -55°C up to 175°C, permitting use in both cold-start and high-temperature environments when appropriate thermal design is applied.

Which mounting method is required for optimal performance?

It is intended for through-hole assembly in the PG-TO-247-4-U07 4-pin format, allowing direct attachment to a heat sink or chassis for improved thermal conduction.