Infineon IMZC120 Type N-Channel MOSFET, 69 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R017M2HXKSA1

RS 제품 번호:: 351-924
제조사 부품 번호:: IMZC120R017M2HXKSA1
제조업체:: Infineon

Infineon IMZC120 Type N-Channel MOSFET, 69 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R017M2HXKSA1

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 unit)*

₩50,340.00

일시적 품절

2027년 4월 01일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 9	₩50,340.00
10 - 99	₩45,300.00
100 +	₩41,800.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-924
제조사 부품 번호:: IMZC120R017M2HXKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	69A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	PG-TO-247-4-U07
	Series	IMZC120
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	45mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	89nC
	Maximum Power Dissipation Pd	382W
	Forward Voltage Vf	5.5V
	Maximum Gate Source Voltage Vgs	25V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	200°C
	Standards/Approvals	JEDEC47/20/22
	Width	16mm
	Length	23.5mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 69A
	Maximum Drain Source Voltage Vds 1200V
	Package Type PG-TO-247-4-U07
	Series IMZC120
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 45mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 89nC
	Maximum Power Dissipation Pd 382W
	Forward Voltage Vf 5.5V
	Maximum Gate Source Voltage Vgs 25V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 200°C
	Standards/Approvals JEDEC47/20/22
	Width 16mm
	Length 23.5mm
	Automotive Standard No

Datasheet - IMZC120R017M2HXKSA1

Infineon IMZC120 Series MOSFET, 1200V Drain Source Voltage, 69A Continuous Drain Current - IMZC120R017M2HXKSA1

This high-voltage N-channel enhancement MOSFET is designed for power switching in demanding electronic systems. It operates across an extended temperature range and is suitable for through-hole board assembly, offering robust high-voltage handling and substantial continuous current capability for industrial and power-conversion contexts.

Features and Benefits:

• 1200V drain-source rating enables high-voltage switching applications
• 69A continuous drain current supports heavy-load operation
• 45mΩ RDS(on) reduces conduction losses during operation
• 382W maximum dissipation allows high-power handling
• 89nC typical gate charge optimises switching performance
• VGS limit of 25V ensures gate drive compatibility and protection

Applications

• Suitable for high-voltage inverter and converter stages
• Ideal for industrial motor-drive power stages
• Used with mains-side power supplies requiring high dissipation
• Can be used for switch-mode power supply primary switching
• Useful in renewable-energy inverter and storage systems

What package facilitates mounting and heat removal?

The component is supplied in a four-pin PG-TO-247-4-U07 through-hole package that simplifies PCB mounting and allows reliable attachment to heatsinks for thermal management.

How does it perform across temperature extremes?

It is specified to function from -55°C up to 200°C, enabling use in environments with wide thermal variation and elevated junction temperatures.

What drive considerations apply for gate control?

The typical gate charge of 89nC requires a gate driver capable of sourcing and sinking sufficient current for intended switching speeds while respecting the 25V maximum gate-source rating.

Are there recognised manufacturing or testing standards referenced?

The device aligns with JEDEC47/20/22 standards for related qualification and testing approaches used in component assessment.