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Infineon IGLT65 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1

RS 제품 번호:: 351-885
제조사 부품 번호:: IGLT65R110D2ATMA1
제조업체:: Infineon

Infineon IGLT65 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩14,694.08

일시적 품절

2026년 6월 24일 부터 배송

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수량	한팩당	한팩당*
2 - 18	₩7,347.04	₩14,695.96
20 - 198	₩6,619.48	₩13,238.96
200 - 998	₩6,098.72	₩12,197.44
1000 - 1998	₩5,662.56	₩11,323.24
2000 +	₩5,068.48	₩10,136.96

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-885
제조사 부품 번호:: IGLT65R110D2ATMA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HDSOP-16
	Series	IGLT65
	Mount Type	Surface
	Pin Count	16
	Maximum Drain Source Resistance Rds	0.14Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.4nC
	Maximum Power Dissipation Pd	55W
	Maximum Gate Source Voltage Vgs	10 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HDSOP-16
	Series IGLT65
	Mount Type Surface
	Pin Count 16
	Maximum Drain Source Resistance Rds 0.14Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.4nC
	Maximum Power Dissipation Pd 55W
	Maximum Gate Source Voltage Vgs 10 V
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLT65R110D2ATMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGLT65 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1

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