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Infineon IGLT65 Type N-Channel MOSFET, 31 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R055D2ATMA1

RS 제품 번호:: 351-886
제조사 부품 번호:: IGLT65R055D2ATMA1
제조업체:: Infineon

Infineon IGLT65 Type N-Channel MOSFET, 31 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R055D2ATMA1

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Subtotal (1 unit)*

₩12,844.16

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2026년 5월 13일 부터 배송

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-886
제조사 부품 번호:: IGLT65R055D2ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	650V
	Series	IGLT65
	Package Type	PG-HDSOP-16
	Mount Type	Surface
	Pin Count	16
	Maximum Drain Source Resistance Rds	0.066Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	10 V
	Typical Gate Charge Qg @ Vgs	4.7nC
	Maximum Power Dissipation Pd	102W
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 650V
	Series IGLT65
	Package Type PG-HDSOP-16
	Mount Type Surface
	Pin Count 16
	Maximum Drain Source Resistance Rds 0.066Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 10 V
	Typical Gate Charge Qg @ Vgs 4.7nC
	Maximum Power Dissipation Pd 102W
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLT65R055D2ATMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGLT65 Type N-Channel MOSFET, 31 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R055D2ATMA1

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