Infineon CoolSiC Type N-Channel MOSFET, 142 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R015M2HXTMA1

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  • 2027년 11월 16일 부터 배송
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RS 제품 번호:
349-047
제조사 부품 번호:
IMLT65R015M2HXTMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

142A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HDSOP-16

Series

CoolSiC

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

14.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

600W

Maximum Gate Source Voltage Vgs

23 V

Typical Gate Charge Qg @ Vgs

148nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, providing unparalleled performance, superior reliability, and excellent ease of use. Designed to meet the demands of modern power systems, this MOSFET enables cost effective, highly efficient, and simplified designs. It is the ideal solution for addressing the ever-growing needs of power systems and markets, offering both high performance and energy efficiency for a wide range of applications.

Ultra low switching losses

Robust against parasitic turn on even with 0 V turn off gate voltage

Flexible driving voltage and compatible with bipolar driving scheme

Robust body diode operation under hard commutation events

The .XT interconnection technology for best in class thermal performance

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