Infineon IPF Type N-Channel Power Transistor, 207 A, 135 V Enhancement, 7-Pin PG-TO263-7 IPF031N13NM6ATMA1

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Subtotal (1 pack of 2 units)*

₩20,401.76

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한팩당
한팩당*
2 - 18₩10,200.88₩20,399.88
20 - 198₩9,180.04₩18,360.08
200 - 998₩8,471.28₩16,944.44
1000 - 1998₩7,858.40₩15,716.80
2000 +₩7,034.96₩14,071.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-405
제조사 부품 번호:
IPF031N13NM6ATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

207A

Maximum Drain Source Voltage Vds

135V

Series

IPF

Package Type

PG-TO263-7

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

294W

Typical Gate Charge Qg @ Vgs

104nC

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, MSL1 J-STD-020, Pb-free lead plating, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.

Optimized for motor drives and battery powered applications

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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