Infineon IPF Type N-Channel Power Transistor, 254 A, 120 V Enhancement, 7-Pin PG-TO263-7 IPF019N12NM6ATMA1
- RS 제품 번호:
- 349-402
- 제조사 부품 번호:
- IPF019N12NM6ATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩23,394.72
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩11,697.36 | ₩23,396.60 |
| 20 - 198 | ₩10,531.76 | ₩21,065.40 |
| 200 + | ₩9,712.08 | ₩19,422.28 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-402
- 제조사 부품 번호:
- IPF019N12NM6ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 254A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | IPF | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 113nC | |
| Maximum Power Dissipation Pd | 395W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, MSL1 J-STD-020, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 254A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series IPF | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 113nC | ||
Maximum Power Dissipation Pd 395W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, MSL1 J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.
Optimized for high frequency switching
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
관련된 링크들
- Infineon IPF Type N-Channel Power Transistor, 207 A, 135 V Enhancement, 7-Pin PG-TO263-7 IPF031N13NM6ATMA1
- Infineon IPF Type N-Channel Power Transistor, 250 A, 135 V Enhancement, 7-Pin PG-TO263-7 IPF021N13NM6ATMA1
- Infineon IPF Type N-Channel Power Transistor, 87 A, 200 V Enhancement, 7-Pin PG-TO263-7 IPF129N20NM6ATMA1
- Infineon IPF Type N-Channel Power Transistor, 138 A, 200 V Enhancement, 7-Pin PG-TO263-7 IPF067N20NM6ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET, 276 A, 100 V, 7-Pin PG-TO263-7 IPF015N10N5ATMA1
- Infineon IPF Type N-Channel MOSFET, 232 A, 40 V Enhancement, 7-Pin TO-263 IPF013N04NF2SATMA1
- Infineon IPF Type N-Channel MOSFET, 302 A, 40 V Enhancement, 7-Pin TO-263 IPF009N04NF2SATMA1
- Infineon IPF Type N-Channel MOSFET, 282 A, 60 V Enhancement, 7-Pin TO-263 IPF012N06NF2SATMA1