Infineon IPF Type N-Channel Power Transistor, 254 A, 120 V Enhancement, 7-Pin PG-TO263-7 IPF019N12NM6ATMA1
- RS 제품 번호:
- 349-402
- 제조사 부품 번호:
- IPF019N12NM6ATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩23,406.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩11,703.00 | ₩23,406.00 |
| 20 - 198 | ₩10,537.40 | ₩21,074.80 |
| 200 + | ₩9,719.60 | ₩19,439.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-402
- 제조사 부품 번호:
- IPF019N12NM6ATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 254A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-TO263-7 | |
| Series | IPF | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 113nC | |
| Maximum Power Dissipation Pd | 395W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, MSL1 J-STD-020, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 254A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-TO263-7 | ||
Series IPF | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 113nC | ||
Maximum Power Dissipation Pd 395W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, MSL1 J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.
Optimized for high frequency switching
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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