Infineon IPF Type N-Channel Power Transistor, 138 A, 200 V Enhancement, 7-Pin PG-TO263-7 IPF067N20NM6ATMA1

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₩14,758.00

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10 - 99₩13,280.32
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500 - 999₩11,366.48
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RS 제품 번호:
349-407
제조사 부품 번호:
IPF067N20NM6ATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

138A

Maximum Drain Source Voltage Vds

200V

Series

IPF

Package Type

PG-TO263-7

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

6.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

72nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

175°C

Standards/Approvals

100% Avalanche Tested, IEC61249-2-21, MSL1 J-STD-020, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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