Infineon BSC035N10NS5 Type N-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin TDSON BSC035N10NS5ATMA1
- RS 제품 번호:
- 171-1985
- 제조사 부품 번호:
- BSC035N10NS5ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩22,776.00
재고있음
- 30 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 1240 | ₩2,277.60 | ₩22,776.00 |
| 1250 - 2490 | ₩2,221.05 | ₩22,210.50 |
| 2500 + | ₩2,185.95 | ₩21,859.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 171-1985
- 제조사 부품 번호:
- BSC035N10NS5ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | BSC035N10NS5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series BSC035N10NS5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5.49mm | ||
Automotive Standard No | ||
The Infineon BSC035N10NS5 is the 100V OptiMOS 5 power MOSFET optimized for synchronous rectification and Ideal for high switching frequency.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
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