Infineon CoolSiC N-Channel MOSFET, 10 A, 1.7 kV Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R450M1XKSA1
- RS 제품 번호:
- 349-109
- 제조사 부품 번호:
- IMWH170R450M1XKSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩17,240.00
일시적 품절
- 2027년 9월 02일 부터 240 개 단위 배송
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- RS 제품 번호:
- 349-109
- 제조사 부품 번호:
- IMWH170R450M1XKSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 1.7kV | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 390mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 15V | |
| Maximum Power Dissipation Pd | 111W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 1.7kV | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 390mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 15V | ||
Maximum Power Dissipation Pd 111W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon CoolSiC Series MOSFET, 1700V Drain Source Voltage, 10A Continuous Drain Current - IMWH170R450M1XKSA1
This MOSFET is a silicon‑carbide power transistor designed for high‑voltage switching in demanding electronic systems. It operates as an N‑channel enhancement device in a through‑hole PG‑TO‑247 3‑pin package, enabling straightforward mounting and thermal management for power stages. The device suits environments requiring wide temperature tolerance and RoHS‑compliant construction.
Features and Benefits:
• 1700V drain‑source rating enables high‑voltage switching capability
• 10A continuous drain current supports sustained power flow
• 111W maximum power dissipation improves heat handling in applications
• 390 mΩ Rds(on) reduces conduction losses under load
• 11.7 nC typical gate charge enables predictable switching energy
• ±15V gate‑source withstand simplifies drive voltage design
• 10A continuous drain current supports sustained power flow
• 111W maximum power dissipation improves heat handling in applications
• 390 mΩ Rds(on) reduces conduction losses under load
• 11.7 nC typical gate charge enables predictable switching energy
• ±15V gate‑source withstand simplifies drive voltage design
Applications
• Suitable for high‑voltage converter topologies in power supplies
• Ideal for switch‑mode power systems in industrial equipment
• Used with power inverters requiring high breakdown voltage
• Can be used for hard‑switching stages in motor drive electronics
• Useful for lab prototyping where through‑hole mounting is preferred
• Ideal for switch‑mode power systems in industrial equipment
• Used with power inverters requiring high breakdown voltage
• Can be used for hard‑switching stages in motor drive electronics
• Useful for lab prototyping where through‑hole mounting is preferred
What temperature range can it tolerate in operation?
It operates across a wide span from -55 °C up to 175 °C, accommodating harsh thermal conditions.
How many pins and what mounting style does it use?
The component has three pins and a through‑hole mount in a PG‑TO‑247 3‑pin package for PCB fastening.
What compliance or approvals apply to this device?
It conforms to RoHS requirements for restricted substances.
What gate voltage limits should be observed during design?
The gate‑to‑source voltage must not exceed ±15V (15V in magnitude) to avoid device stress.
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