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Infineon CoolSiC Type N-Channel MOSFET, 31 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R080M1TXKSA1

RS 제품 번호:: 349-378
제조사 부품 번호:: AIMZH120R080M1TXKSA1
제조업체:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 31 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R080M1TXKSA1

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Subtotal (1 unit)*

₩20,604.80

재고있음

240 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩20,604.80
10 - 99	₩18,536.80
100 - 499	₩17,108.00
500 - 999	₩15,867.20
1000 +	₩14,212.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-378
제조사 부품 번호:: AIMZH120R080M1TXKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	1200V
	Series	CoolSiC
	Package Type	PG-TO-247-4-STD-NT6.7
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	23 V
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Power Dissipation Pd	169W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101, AEC-Q100

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 1200V
	Series CoolSiC
	Package Type PG-TO-247-4-STD-NT6.7
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 23 V
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Power Dissipation Pd 169W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101, AEC-Q100

Datasheet - AIMZH120R080M1TXKSA1

COO (Country of Origin):: CN

The Infineon SiC MOSFET features best in class switching performance, robustness against parasitic turn ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on board charger and DC to DC applications.

Very low switching losses

Best in class switching energy

Lowest device capacitances

Sense pin for optimized switching performance

Suitable for HV creepage requirements

Thinner leads for reduced risk of solder bridges

Infineon CoolSiC Type N-Channel MOSFET, 31 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R080M1TXKSA1

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