Infineon CoolSiC N-Channel MOSFET, 7.5 A, 1.7 kV Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R650M1XKSA1
- RS 제품 번호:
- 349-110
- 제조사 부품 번호:
- IMWH170R650M1XKSA1
- 제조업체:
- Infineon
대량 구매 할인 받기
20개 더 담고 ₩24,800.00 할인 받기
View bulk pricing optionsSubtotal (1 pack of 2 units)*
₩24,920.00
재고있음
- 추가로 2026년 11월 04일 부터 216 개 단위 배송
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수량 | 한팩당 | 한팩당* | 절감 |
|---|---|---|---|
| 2 - 18 | ₩12,460.00 | ₩24,920.00 | - |
| 20 - 198 | ₩11,220.00 | ₩22,440.00 | ₩24,800.00 |
| 200 + | ₩10,340.00 | ₩20,680.00 | ₩424,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-110
- 제조사 부품 번호:
- IMWH170R650M1XKSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 1.7kV | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 580mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 15V | |
| Typical Gate Charge Qg @ Vgs | 8.1nC | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 1.7kV | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 580mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 15V | ||
Typical Gate Charge Qg @ Vgs 8.1nC | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC 1700 V SiC Trench MOSFET is a high performance silicon carbide MOSFET designed for efficient power switching. It is 12 V / 0 V gate-source voltage compatible, making it suitable for use with most flyback controllers. Featuring a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it ensures reliable and efficient switching performance in a wide range of power applications. This MOSFET is an excellent choice for systems requiring high voltage operation and enhanced energy efficiency.
Very low switching losses
Fully controllable dv/dt for EMI optimization
The .XT interconnection technology for best in class thermal performance
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