Infineon IMB N-Channel MOSFET, 189 A, 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R008M2HXTMA1

RS 제품 번호:: 349-092
제조사 부품 번호:: IMBG120R008M2HXTMA1
제조업체:: Infineon

Infineon IMB N-Channel MOSFET, 189 A, 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R008M2HXTMA1

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Subtotal (1 unit)*

₩102,780.00

685 개 단위 배송 준비 완료

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RS 제품 번호:: 349-092
제조사 부품 번호:: IMBG120R008M2HXTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	189A
	Maximum Drain Source Voltage Vds	1.2kV
	Package Type	PG-TO263-7
	Series	IMB
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	21mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	800W
	Typical Gate Charge Qg @ Vgs	195nC
	Maximum Gate Source Voltage Vgs	25V
	Maximum Operating Temperature	200°C
	Width	10.2mm
	Height	4.5mm
	Length	15mm
	Standards/Approvals	JEDEC47/20/22, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 189A
	Maximum Drain Source Voltage Vds 1.2kV
	Package Type PG-TO263-7
	Series IMB
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 21mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 800W
	Typical Gate Charge Qg @ Vgs 195nC
	Maximum Gate Source Voltage Vgs 25V
	Maximum Operating Temperature 200°C
	Width 10.2mm
	Height 4.5mm
	Length 15mm
	Standards/Approvals JEDEC47/20/22, RoHS
	Automotive Standard No

Datasheet - IMBG120R008M2HXTMA1

COO (Country of Origin):: MY

Infineon IMB Series MOSFET, 1200V Drain Source Voltage, 189A Continuous Drain Current - IMBG120R008M2HXTMA1

This MOSFET is a high-voltage, N-channel enhancement device designed for demanding power-switching environments. It is intended for surface-mount applications where substantial current handling and elevated temperature tolerance are required. The component meets recognised industry package conventions and is suitable for use in industrial power stages that require robust conduction and switching capability.

Features and Benefits:

• 800W power dissipation enables sustained high-power operation
• 1200V drain-source rating supports high-voltage topologies
• 189A continuous drain current permits heavy-load conduction
• 21mΩ Rds(on) delivers low conduction losses under load
• 195nC typical gate charge suited to high-energy switching
• 7-pin PG-TO263-7 package simplifies high-power surface mounting

Applications

• Suitable for industrial inverter and converter stages
• Ideal for high-voltage switch-mode power supplies
• Used with motor-drive power modules requiring high current
• Can be used for renewable-energy power electronics
• Suitable for fast-switching, high-energy switching circuits

What thermal range can it operate across in harsh conditions?

It functions from -55°C up to 200°C, enabling deployment in extreme thermal environments.

How does the package type affect assembly on production boards?

The PG-TO263-7 surface-mount format provides a compact, low-profile solution optimised for automated soldering and heat-sink attachment.

What is the gate voltage endurance for control interfaces?

The device permits gate voltages up to 25V, allowing compatibility with common gate-driver outputs.

Is this device a channel enhancement or depletion type?

It is an N-channel enhancement-mode transistor suitable for conventional gate-driven switching topologies.