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Infineon IMB Type N-Channel MOSFET, 52 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R040M2HXTMA1

RS 제품 번호:: 349-101
제조사 부품 번호:: IMBG120R040M2HXTMA1
제조업체:: Infineon

Infineon IMB Type N-Channel MOSFET, 52 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R040M2HXTMA1

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Subtotal (1 unit)*

₩20,836.04

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RS 제품 번호:: 349-101
제조사 부품 번호:: IMBG120R040M2HXTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	52A
	Maximum Drain Source Voltage Vds	1200V
	Series	IMB
	Package Type	PG-TO263-7
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	39.6mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	±25 V
	Typical Gate Charge Qg @ Vgs	39nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	200°C
	Standards/Approvals	JEDEC47/20/22, RoHS
	Width	10.2 mm
	Length	15mm
	Height	4.5mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 52A
	Maximum Drain Source Voltage Vds 1200V
	Series IMB
	Package Type PG-TO263-7
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 39.6mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs ±25 V
	Typical Gate Charge Qg @ Vgs 39nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 200°C
	Standards/Approvals JEDEC47/20/22, RoHS
	Width 10.2 mm
	Length 15mm
	Height 4.5mm
	Automotive Standard No

Datasheet - IMBG120R040M2HXTMA1

COO (Country of Origin):: MY

The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.

Robust body diode for hard commutation

The .XT interconnection technology for best in class thermal performance

Better energy efficiency

Cooling optimization

Higher power density

New robustness features

Highly reliable

Infineon IMB Type N-Channel MOSFET, 52 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R040M2HXTMA1

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