Infineon IMB N-Channel MOSFET, 8.1 A, 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1

RS 제품 번호:: 349-107
제조사 부품 번호:: IMBG120R234M2HXTMA1
제조업체:: Infineon

Infineon IMB N-Channel MOSFET, 8.1 A, 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1

대량 구매 할인 받기

20개 더 담고 ₩17,200.00 할인 받기

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Subtotal (1 pack of 2 units)*

₩17,360.00

1,000 개 단위 배송 준비 완료

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수량	한팩당	한팩당*	절감
2 - 18	₩8,680.00	₩17,360.00	-
20 - 198	₩7,820.00	₩15,640.00	₩17,200.00
200 - 998	₩7,210.00	₩14,420.00	₩294,000.00
1000 - 1998	₩6,680.00	₩13,360.00	₩2,000,000.00
2000 +	₩5,990.00	₩11,980.00	₩5,380,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-107
제조사 부품 번호:: IMBG120R234M2HXTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8.1A
	Maximum Drain Source Voltage Vds	1.2kV
	Package Type	PG-TO263-7
	Series	IMB
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	622mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	80W
	Typical Gate Charge Qg @ Vgs	7.9nC
	Maximum Gate Source Voltage Vgs	25V
	Maximum Operating Temperature	200°C
	Length	15mm
	Height	4.5mm
	Width	10.2mm
	Standards/Approvals	JEDEC47/20/22, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8.1A
	Maximum Drain Source Voltage Vds 1.2kV
	Package Type PG-TO263-7
	Series IMB
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 622mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 80W
	Typical Gate Charge Qg @ Vgs 7.9nC
	Maximum Gate Source Voltage Vgs 25V
	Maximum Operating Temperature 200°C
	Length 15mm
	Height 4.5mm
	Width 10.2mm
	Standards/Approvals JEDEC47/20/22, RoHS
	Automotive Standard No

Datasheet - IMBG120R234M2HXTMA1

COO (Country of Origin):: MY

Infineon IMB Series MOSFET, 1200V Maximum Drain Source Voltage, 80W Maximum Power Dissipation - IMBG120R234M2HXTMA1

This MOSFET is a high-voltage N-channel switching device designed for surface-mount power applications. It delivers controlled conduction for switching and conversion functions while operating across a wide ambient range. The component is configured in a seven-pin PG-TO263-7 package for integration onto power boards and is suitable where robust gate drive and high blocking voltage are required.

Features and Benefits:

• 1200V drain rating enables high-voltage switching applications
• 8.1A continuous drain current supports moderate power throughput
• 80W power dissipation allows sustained thermal loading
• 622mΩ low Rds(on) reduces conduction losses during operation
• 7.9nC gate charge enables relatively fast switching transitions
• 25V gate tolerance ensures compatibility with common gate drives

Applications

• Used for high-voltage DC-DC converters in industrial systems
• Suitable for power switching in renewable-energy inverters
• Ideal for motor-drive front-ends with elevated voltage rails
• Can be used for switch-mode power supplies and regulators
• Used with thermal management for compact power modules

What thermal extremes can this device withstand during operation?

It is rated to function between -55°C and 200°C, allowing use in environments with very low temperatures and exceptionally high junction or ambient conditions when suitably mounted and cooled.

How does the pin configuration affect PCB design and mounting?

The seven-pin PG-TO263-7 layout concentrates power and gate connections for effective heat transfer to the board and simplifies routing of drain and source tracks for low‑impedance current paths.

What standards and environmental constraints are reflected in its manufacture?

Production conforms to JEDEC47/20/22 handling recommendations and the device meets RoHS requirements for restricted substances.

How should designers account for switching performance in high-frequency circuits?

Use the typical 7.9nC gate charge figure to estimate gate-drive energy and select gate drivers and deadtime settings to balance switching losses and electromagnetic emission control.