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Infineon IMB Type N-Channel MOSFET, 8.1 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1

RS 제품 번호:: 349-107
제조사 부품 번호:: IMBG120R234M2HXTMA1
제조업체:: Infineon

Infineon IMB Type N-Channel MOSFET, 8.1 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩15,840.88

재고있음

추가로 2025년 12월 29일 부터 1,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 18	₩7,920.44	₩15,840.88
20 - 198	₩7,128.96	₩14,259.80
200 - 998	₩6,578.12	₩13,156.24
1000 - 1998	₩6,098.72	₩12,197.44
2000 +	₩5,463.28	₩10,928.44

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-107
제조사 부품 번호:: IMBG120R234M2HXTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8.1A
	Maximum Drain Source Voltage Vds	1200V
	Series	IMB
	Package Type	PG-TO263-7
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	622mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	80W
	Typical Gate Charge Qg @ Vgs	7.9nC
	Maximum Gate Source Voltage Vgs	±25 V
	Maximum Operating Temperature	200°C
	Standards/Approvals	JEDEC47/20/22, RoHS
	Height	4.5mm
	Width	10.2 mm
	Length	15mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8.1A
	Maximum Drain Source Voltage Vds 1200V
	Series IMB
	Package Type PG-TO263-7
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 622mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 80W
	Typical Gate Charge Qg @ Vgs 7.9nC
	Maximum Gate Source Voltage Vgs ±25 V
	Maximum Operating Temperature 200°C
	Standards/Approvals JEDEC47/20/22, RoHS
	Height 4.5mm
	Width 10.2 mm
	Length 15mm
	Automotive Standard No

Datasheet - IMBG120R234M2HXTMA1

COO (Country of Origin):: MY

The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.

Robust body diode for hard commutation

The .XT interconnection technology for best in class thermal performance

Better energy efficiency

Cooling optimization

Higher power density

New robustness features

Highly reliable

Infineon IMB Type N-Channel MOSFET, 8.1 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1

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