Infineon 600V CoolMOS SiC N-Channel MOSFET, 112 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R020CFD7XTMA1

모든 MOSFETs 열람하기
사용할 수 없음
RS는 더 이상 이 제품을 입고하지 않습니다.
RS 제품 번호:
284-739
제조사 부품 번호:
IPDQ60R020CFD7XTMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

600 V

Series

600V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features a CoolMOS CFD7 series introduces a ground breaking power transistor specifically engineered for high voltage applications. With a remarkable voltage rating of 600V, it stands out due to its enhanced efficiency and reliability. The advanced super junction technology provides unparalleled performance, particularly in soft switching applications such as phase shift full bridge converters and LLC resonant topologies. The optimisation of gate charge and reverse recovery characteristics significantly reduces losses, thereby boosting the overall performance of power systems. This product is an ideal choice for industries demanding robust electrical performance, such as server ecosystems, telecommunications, and electric vehicle charging.

Optimised for soft switching topologies
Low gate charge enables faster switching
Superior reverse recovery improves performance
Designed for high reliability and uptime
Increases power density and saving space
Qualified per JEDEC standards for industry

관련된 링크들