제조사부품번호

Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET, 150 A, 1200 V Enhancement EasyDUAL FF6MR12W2M1HPB11BPSA1

RS 제품 번호:: 348-978
제조사 부품 번호:: FF6MR12W2M1HPB11BPSA1
제조업체:: Infineon

Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET, 150 A, 1200 V Enhancement EasyDUAL FF6MR12W2M1HPB11BPSA1

Subtotal (1 unit)*

₩604,207.56

재고있음

18 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 +	₩604,207.56

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 348-978
제조사 부품 번호:: FF6MR12W2M1HPB11BPSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	150A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	EasyDUAL
	Series	CoolSiC Trench MOSFET
	Mount Type	Screw
	Maximum Drain Source Resistance Rds	11.6mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	20mW
	Forward Voltage Vf	5.35V
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 60747, IEC 60749, IEC 60068
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 150A
	Maximum Drain Source Voltage Vds 1200V
	Package Type EasyDUAL
	Series CoolSiC Trench MOSFET
	Mount Type Screw
	Maximum Drain Source Resistance Rds 11.6mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 20mW
	Forward Voltage Vf 5.35V
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 60747, IEC 60749, IEC 60068
	Automotive Standard No

Datasheet - FF6MR12W2M1HPB11BPSA1

COO (Country of Origin):: DE

The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module is designed to deliver high performance power solutions with best-in-class packaging, featuring a compact 12 mm height for efficient space utilization. The module incorporates leading-edge Wide Bandgap (WBG) materials, providing superior efficiency, reliability, and thermal performance. With very low module stray inductance, it ensures minimized power losses and enhanced switching dynamics. The module is powered by the Enhanced CoolSiC MOSFET Gen 1, offering improved thermal management and efficiency, making it ideal for demanding power applications.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET, 150 A, 1200 V Enhancement EasyDUAL FF6MR12W2M1HPB11BPSA1

관련된 링크들