onsemi PowerTrench Power Clip N-Channel MOSFET, 126 A, 25 V Enhancement, 8-Pin PQFN-8 NTTFD1D8N02P1E
- RS 제품 번호:
- 333-403
- 제조사 부품 번호:
- NTTFD1D8N02P1E
- 제조업체:
- onsemi
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대량 구매 할인 받기
50개 더 담고 ₩5,400.00 할인 받기
View bulk pricing optionsSubtotal (1 tape of 5 units)*
₩11,080.00
일시적 품절
- 2027년 11월 12일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tape* | 절감 |
|---|---|---|---|
| 5 - 45 | ₩2,216.00 | ₩11,080.00 | - |
| 50 - 95 | ₩2,108.00 | ₩10,540.00 | ₩5,400.00 |
| 100 - 495 | ₩1,948.00 | ₩9,740.00 | ₩26,800.00 |
| 500 - 995 | ₩1,796.00 | ₩8,980.00 | ₩210,000.00 |
| 1000 + | ₩1,720.00 | ₩8,600.00 | ₩496,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 333-403
- 제조사 부품 번호:
- NTTFD1D8N02P1E
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | PowerTrench Power Clip | |
| Package Type | PQFN-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 37.5nC | |
| Maximum Power Dissipation Pd | 36W | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series PowerTrench Power Clip | ||
Package Type PQFN-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 37.5nC | ||
Maximum Power Dissipation Pd 36W | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Power MOSFET optimized for low-voltage applications, offering high efficiency and minimal conduction losses. With its DSC-6 package, it provides excellent thermal performance and space-saving benefits for modern electronic designs. This device ensures reliable operation with low R DS(on) and robust current handling.
Small Footprint for Compact Design
Low QG and Capacitance to Minimize Driver Losses
Pb Free
RoHS Compliant
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