onsemi Power Type N-Channel MOSFET, 150 A, 25 V Enhancement, 8-Pin PQFN NTTFS1D8N02P1E
- RS 제품 번호:
- 205-2432
- 제조사 부품 번호:
- NTTFS1D8N02P1E
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩23,218.00
마지막 RS 재고
- 최종적인 8,960 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 740 | ₩2,321.80 | ₩23,218.00 |
| 750 - 1490 | ₩2,261.64 | ₩22,616.40 |
| 1500 + | ₩2,229.68 | ₩22,296.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 205-2432
- 제조사 부품 번호:
- NTTFS1D8N02P1E
- 제조업체:
- onsemi
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PQFN | |
| Series | Power | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 46W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.2 mm | |
| Height | 0.7mm | |
| Length | 3.2mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PQFN | ||
Series Power | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 46W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Width 3.2 mm | ||
Height 0.7mm | ||
Length 3.2mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Power33 series 25V N-Channel MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Maximum drain current rating is 150A
Drain to source resistance rating is 1.3mohm
Small footprint for compact design
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
100% UIL tested
Package is Power 33 (PQFN8)
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