onsemi NTMFS Type N-Channel MOSFET, 110 A, 100 V N, 8-Pin PQFN NTMFS7D8N10GTWG
- RS 제품 번호:
- 229-6473
- 제조사 부품 번호:
- NTMFS7D8N10GTWG
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩10,772.40
마지막 RS 재고
- 최종적인 2,996 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩5,386.20 | ₩10,772.40 |
| 10 - 98 | ₩5,226.40 | ₩10,452.80 |
| 100 - 248 | ₩5,066.60 | ₩10,133.20 |
| 250 - 498 | ₩4,953.80 | ₩9,907.60 |
| 500 + | ₩4,850.40 | ₩9,700.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 229-6473
- 제조사 부품 번호:
- NTMFS7D8N10GTWG
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.84V | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Height | 6mm | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.84V | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Height 6mm | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor N-channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Minimize conduction losses
High peak UIS current capability for ruggedness
Halogen-free
Pb-free
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