Infineon OptiMOS Type N-Channel MOSFET, 637 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQDH45N04LM6CGATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
포장 옵션
RS 제품 번호:
285-039
제조사 부품 번호:
IQDH45N04LM6CGATMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

637A

Maximum Drain Source Voltage Vds

40V

Package Type

PG-TTFN-9

Series

OptiMOS

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

0.45mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

333W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an Advanced power transistor excels in high performance applications, delivering exceptional efficiency and reliability. Designed within the OptiMOS 6 series, it showcases impressive electrical characteristics, setting a new standard for MOSFET technology. With 100% avalanche testing, users can Trust in its robustness, whether used in power management or motor control applications. Additionally, its RoHS compliance and halogen free attributes ensure adherence to strict environmental standards, making it a smart choice for eco conscious projects.

N channel design for logic level applications

Outstanding thermal resistance for heat dissipation

Engineered for Rapid switching efficiency

Avalanche rated for reliability under stress

Pb free and RoHS compliant for eco friendliness

Halogen free construction meets safety standards

JEDEC certified for industrial performance

관련된 링크들