Infineon OptiMOS N channel-Channel Power MOSFET, 127 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQE031N08LM6CGATMA1
- RS 제품 번호:
- 762-896
- 제조사 부품 번호:
- IQE031N08LM6CGATMA1
- 제조업체:
- Infineon
N
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩3,898.05
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩3,898.05 |
| 10 - 24 | ₩3,266.25 |
| 25 - 99 | ₩2,026.05 |
| 100 - 499 | ₩1,981.20 |
| 500 + | ₩1,938.30 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 762-896
- 제조사 부품 번호:
- IQE031N08LM6CGATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 127A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface Mount | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 3.15mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 127A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface Mount | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 3.15mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Standards/Approvals RoHS Compliant | ||
Height 0.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor is optimized for high performance SMPS featuring rated voltage of 80 V. It is halogen‑free according to IEC61249‑2‑21 and is RoHS compliant.
N‑channel
100% avalanche tested
75°C operating temperature
Pb‑free lead plating
관련된 링크들
- Infineon OptiMOS SiC N-Channel MOSFET, 99 A, 80 V, 9-Pin PG-TTFN-9 IQE046N08LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V TTFN IQE013N04LM6CGATMA1
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V TTFN
- Infineon OptiMOS SiC N-Channel MOSFET, 148 A, 150 V, 9-Pin PG-TTFN-9 IQD063N15NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 273 A, 100 V Enhancement, 9-Pin PG-TTFN-9 IQD020N10NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1