Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1
- RS 제품 번호:
- 284-951
- 제조사 부품 번호:
- IQE022N06LM5CGATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩23,127.00
일시적 품절
- 2026년 9월 03일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩4,625.40 | ₩23,127.00 |
| 50 - 95 | ₩4,395.30 | ₩21,976.50 |
| 100 - 495 | ₩4,067.70 | ₩20,338.50 |
| 500 - 995 | ₩3,744.00 | ₩18,720.00 |
| 1000 + | ₩3,611.40 | ₩18,057.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 284-951
- 제조사 부품 번호:
- IQE022N06LM5CGATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- AT
The Infineon MOSFET is a high performance power transistor is engineered for demanding power management applications. It showcases Advanced OptiMOS 5 technology, optimised for synchronous rectification in Switched Mode power supplies. The innovative design ensures very low on resistance, offering superior thermal characteristics that enhance reliability and efficiency. This product, rated at 60V, is especially suitable for industrial applications due to its robust avalanche testing and compliance with RoHS standards. With its logic level N channel design, it simplifies integration into your circuit while maintaining outstanding operational performance.
Optimised for high efficiency power conversion
Logic level N channel for easy interfacing
100% avalanche tested for reliability
RoHS compliant for environmental safety
Halogen free and supporting sustainability standards
JEDEC validated for industrial applications
Superior thermal management extends lifespan
High continuous drain current for demanding loads
관련된 링크들
- Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET, 99 A, 80 V, 9-Pin PG-TTFN-9 IQE046N08LM5CGATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET, 127 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQE031N08LM6CGATMA1
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V TTFN IQE013N04LM6CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 637 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQDH45N04LM6CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V TTFN
