Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 19 A, 650 V, 8-Pin PG-HSOF-8 IPT65R155CFD7XTMA1

모든 MOSFETs 열람하기
사용할 수 없음
RS는 더 이상 이 제품을 입고하지 않습니다.
포장 옵션
RS 제품 번호:
284-915
제조사 부품 번호:
IPT65R155CFD7XTMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is power device redefines efficiency and performance in high voltage applications with its advanced coolMOS technology. Designed specifically for resonant switching topologies, it boasts remarkable switching capabilities, ensuring significant energy savings and improved thermal management. The latest offering extends the voltage class options, acting as a worthy successor to previous models. Its ultra fast body diode combined with superior hard commutation robustness positions this device as the optimal choice for stringent industrial requirements, particularly in sectors like telecommunications and electric vehicle charging.

Ultra fast body diode boosts operational efficiency
High breakdown voltage ensures added safety
Best in class RDS(on) lowers conduction losses
Outstanding light load performance enhances efficiency
Optimised for server and solar applications

관련된 링크들