Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 23 A, 650 V, 8-Pin PG-HSOF-8 IPT65R125CFD7XTMA1

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RS 제품 번호:
284-910
제조사 부품 번호:
IPT65R125CFD7XTMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is a cutting edge MOSFET designed to elevate power efficiency in demanding applications. This device features industry leading switching performance, encapsulated in the PG HSOF 8 package, optimising thermal management and maximising operational reliability. With a remarkable breakdown voltage of 650V, it is engineered to handle high power density and is an essential component for resonant switching topologies, such as LLC and phase shift full bridge converters. It not only meets the rigorous standards for efficiency and reliability but also supports designs that require increased power margins and enhanced performance across a range of operating temperatures.

Ultra fast body diode enhances performance
Reduces switching losses for energy efficiency
Excellent ruggedness for demanding applications
Supports increased bus voltage for safety
Outstanding light load efficiency for industrial use

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