Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1
- RS 제품 번호:
- 284-767
- 제조사 부품 번호:
- IQE046N08LM5SCATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 6000 units)*
₩17,619,360.00
일시적 품절
- 2026년 3월 30일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 6000 + | ₩2,936.56 | ₩17,622,744.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 284-767
- 제조사 부품 번호:
- IQE046N08LM5SCATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-WHSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-WHSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is designed to deliver exceptional performance and reliability in high efficiency applications. Built for synchronous rectification in switch mode power supplies, this innovative MOSFET integrates Advanced thermal management features to ensure superior heat dissipation. Leveraging a logic level N channel configuration with extremely low on resistance, it guarantees efficient operation even at elevated temperatures. This component meets stringent industry standards while offering robust avalanche protection, making it a prime choice for industrial applications requiring high current handling and environmental toughness.
Optimised for high performance switching
Low on resistance enhances energy efficiency
Robust thermal performance for longevity
Avalanche tested for reliability
Pb free lead plating meets RoHS standards
Halogen free for eco friendly compliance
Ideal for stringent industrial applications
Compact package for easy integration
관련된 링크들
- Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET, 99 A, 80 V, 9-Pin PG-TTFN-9 IQE046N08LM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET, 85 A, 100 V, 8-Pin PG-WHSON-8 IQE065N10NM5SCATMA1
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V Enhancement, 8-Pin WHSON IQE013N04LM6SCATMA1
- Infineon IQE Type N-Channel MOSFET, 310 A, 25 V Enhancement, 8-Pin WHSON IQE006NE2LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE046N08LM5ATMA1