Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- RS 제품 번호:
- 284-755
- 제조사 부품 번호:
- IQE022N06LM5SCATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩19,382.80
재고있음
- 100 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩3,876.56 | ₩19,379.04 |
| 50 - 95 | ₩3,681.04 | ₩18,401.44 |
| 100 - 495 | ₩3,410.32 | ₩17,047.84 |
| 500 - 995 | ₩3,139.60 | ₩15,696.12 |
| 1000 + | ₩3,023.04 | ₩15,113.32 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 284-755
- 제조사 부품 번호:
- IQE022N06LM5SCATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-WHSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC, IEC61249-2-21 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-WHSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is a highly efficient MOSFET designed to meet the demands of Advanced power management applications. With a power dissipation capacity that allows it to operate reliably under intense conditions, this power transistor ensures optimal efficiency and thermal management. Its Pb free and RoHS compliant construction endorses its usability in eco sensitive applications, while also being halogen free, enhancing its adaptability across various sectors. Fully qualified according to JEDEC standards for industrial applications, it is a trusted component for engineers seeking reliable, high performance solutions.
Optimised for power management
Supports synchronous rectification in SMPS
N channel with logic level compatibility
Very low on resistance for thermal performance
Superior thermal resistance for reliability
100% avalanche tested for operational assurance
Complies with environmental regulations
Comprehensive validation for industrial use
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