Infineon OptiMOS Type N-Channel MOSFET, 314 A, 120 V Enhancement, 8-Pin PG-HSOF-8-1 IAUTN12S5N017ATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

Subtotal (1 reel of 2000 units)*

₩15,935,400.00

Add to Basket
수량 선택 또는 입력
일시적 품절
  • 2026년 9월 03일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
릴당*
2000 +₩7,967.70₩15,935,400.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
284-667
제조사 부품 번호:
IAUTN12S5N017ATMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

314A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS

Package Type

PG-HSOF-8-1

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

358W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS 5 automotive power MOSFET is engineered for robust performance in demanding applications. Featuring the OptiMOS 5 technology, it excels in efficiency and reliability, making it an Ideal choice for automotive power management solutions. Its N channel enhancement mode structure delivers high level functionality while adhering to rigorous industry standards. Designed to withstand extreme conditions, this power transistor ensures operability up to 175°C and features an extended qualification beyond AEC Q101.

Optimised for automotive compatibility

Enhanced testing ensures dependable performance

Robust design with Advanced thermal management

MSL1 rating supports 260°C Peak reflow

RoHS compliant for eco friendly initiatives

Avalanche testing confirms transient resilience

관련된 링크들