Infineon OptiMOS Type N-Channel MOSFET, 314 A, 120 V Enhancement, 8-Pin PG-HSOF-8-1 IAUTN12S5N017ATMA1
- RS 제품 번호:
- 284-669
- 제조사 부품 번호:
- IAUTN12S5N017ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩18,254.80
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩9,127.40 | ₩18,254.80 |
| 20 - 198 | ₩8,223.12 | ₩16,444.36 |
| 200 - 998 | ₩7,576.40 | ₩15,154.68 |
| 1000 + | ₩7,034.96 | ₩14,071.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 284-669
- 제조사 부품 번호:
- IAUTN12S5N017ATMA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 314A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-HSOF-8-1 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 358W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 314A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-HSOF-8-1 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 358W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 automotive power MOSFET is engineered for robust performance in demanding applications. Featuring the OptiMOS 5 technology, it excels in efficiency and reliability, making it an Ideal choice for automotive power management solutions. Its N channel enhancement mode structure delivers high level functionality while adhering to rigorous industry standards. Designed to withstand extreme conditions, this power transistor ensures operability up to 175°C and features an extended qualification beyond AEC Q101.
Optimised for automotive compatibility
Enhanced testing ensures dependable performance
Robust design with Advanced thermal management
MSL1 rating supports 260°C Peak reflow
RoHS compliant for eco friendly initiatives
Avalanche testing confirms transient resilience
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