ROHM HP8J 2 Type P-Channel MOSFET, 12.5 A, 100 V Enhancement, 8-Pin HSOP-8 HP8JE5TB1
- RS 제품 번호:
- 264-654
- 제조사 부품 번호:
- HP8JE5TB1
- 제조업체:
- ROHM
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tape of 5 units)*
₩11,000.00
재고있음
- 추가로 2026년 8월 27일 부터 2,590 개 단위 배송
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수량 | 한팩당 | Per Tape* |
|---|---|---|
| 5 - 45 | ₩2,200.00 | ₩11,000.00 |
| 50 - 95 | ₩2,088.00 | ₩10,440.00 |
| 100 - 495 | ₩1,936.00 | ₩9,680.00 |
| 500 - 995 | ₩1,780.00 | ₩8,900.00 |
| 1000 + | ₩1,720.00 | ₩8,600.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 264-654
- 제조사 부품 번호:
- HP8JE5TB1
- 제조업체:
- ROHM
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSOP-8 | |
| Series | HP8J | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 127mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 38.0nC | |
| Maximum Power Dissipation Pd | 21W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSOP-8 | ||
Series HP8J | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 127mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 38.0nC | ||
Maximum Power Dissipation Pd 21W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM Semiconductor is a dual P-channel MOSFET designed for efficient switching and motor drive applications. It features a low on-resistance and high power dissipation, making it ideal for high-performance circuits. The device is housed in an 8-HSOP package, ensuring compact and reliable surface mounting.
RoHS compliant
High power Package
Pb free plating
Halogen Free
Rg and UIS tested
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