ROHM HP8K 2 Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin HSOP-8 HP8KE6TB1
- RS 제품 번호:
- 264-871
- 제조사 부품 번호:
- HP8KE6TB1
- 제조업체:
- ROHM
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대량 구매 할인 기용 가능
Subtotal (1 tape of 5 units)*
₩7,407.20
재고있음
- 100 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 5 - 45 | ₩1,481.44 | ₩7,410.96 |
| 50 - 95 | ₩1,406.24 | ₩7,034.96 |
| 100 - 495 | ₩1,302.84 | ₩6,516.08 |
| 500 - 995 | ₩1,199.44 | ₩5,995.32 |
| 1000 + | ₩1,158.08 | ₩5,786.64 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 264-871
- 제조사 부품 번호:
- HP8KE6TB1
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HP8K | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 21W | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HP8K | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 21W | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 17A. Designed in an HSOP8 package and offers low on-resistance.
Low on-resistance
Small Surface Mount Package (HSOP8)
Pb-free lead plating and RoHS compliant
Halogen Free
관련된 링크들
- ROHM HP8KE5 Dual N-Channel MOSFET, 8.5 A, 100 V Enhancement, 8-Pin HSOP-8 HP8KE5TB1
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- ROHM HP8 2 Type N-Channel MOSFET, 60 V Enhancement, 8-Pin HSOP-8 HP8KC6TB1
- ROHM HP8 2 Type N-Channel MOSFET, 60 V Enhancement, 8-Pin HSOP-8 HP8KC7TB1
- ROHM HP8MA2 Type P, Type N-Channel MOSFET Enhancement, 8-Pin HSOP-8 HP8MA2TB1
- ROHM Dual HP 2 Type N-Channel MOSFET, 80 A, 30 V Enhancement, 8-Pin HSOP HP8K24TB
- ROHM HP8 2 Type N-Channel MOSFET, 24 A, 40 V Enhancement, 8-Pin HSOP-8 HP8KB7TB1
- ROHM Nch+Nch HP8 2 Type N-Channel MOSFET, 40 V Enhancement, 8-Pin HSOP-8 HP8KB6TB1
