제조사부품번호

STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG

RS 제품 번호:: 215-231
제조사 부품 번호:: SCT040H120G3AG
제조업체:: STMicroelectronics

STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG

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Subtotal (1 reel of 1000 units)*

₩25,740,960.00

일시적 품절

2026년 8월 27일 부터 배송

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수량	한팩당	릴당*
1000 +	₩25,740.96	₩25,741,524.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-231
제조사 부품 번호:: SCT040H120G3AG
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	1200V
	Series	SCT
	Package Type	H2PAK-7
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	2.6V
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Power Dissipation Pd	300W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, RoHS
	Length	15.25mm
	Height	4.8mm
	Width	10.4 mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 1200V
	Series SCT
	Package Type H2PAK-7
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 2.6V
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Power Dissipation Pd 300W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, RoHS
	Length 15.25mm
	Height 4.8mm
	Width 10.4 mm
	Automotive Standard AEC-Q101

Datasheet - SCT040H120G3AG

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG

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