STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7
- RS 제품 번호:
- 214-960
- 제조사 부품 번호:
- SCT070H120G3-7
- 제조업체:
- STMicroelectronics
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Subtotal (1 reel of 1000 units)*
₩18,164,560.00
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 + | ₩18,164.56 | ₩18,164,372.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 214-960
- 제조사 부품 번호:
- SCT070H120G3-7
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-7 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Forward Voltage Vf | 3V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 224W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.25mm | |
| Width | 10.4 mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-7 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Forward Voltage Vf 3V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 224W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.25mm | ||
Width 10.4 mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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