STMicroelectronics STripFET II Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25NF10T4
- RS 제품 번호:
- 151-917
- 제조사 부품 번호:
- STD25NF10T4
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tape of 10 units)*
₩12,332.80
재고있음
- 추가로 2025년 12월 29일 부터 7,470 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 10 - 90 | ₩1,233.28 | ₩12,332.80 |
| 100 - 240 | ₩1,173.12 | ₩11,731.20 |
| 250 - 490 | ₩1,086.64 | ₩10,866.40 |
| 500 - 990 | ₩998.28 | ₩9,982.80 |
| 1000 + | ₩962.56 | ₩9,625.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-917
- 제조사 부품 번호:
- STD25NF10T4
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | STripFET II | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series STripFET II | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters for telecom and computer applications.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
관련된 링크들
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- STMicroelectronics STripFET II Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25NF10T4
- STMicroelectronics STripFET II Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET II Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-252
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