STMicroelectronics STripFET II Type N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 STD12NF06T4
- RS 제품 번호:
- 151-936
- 제조사 부품 번호:
- STD12NF06T4
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 2500 units)*
₩1,301,900.00
일시적 품절
- 2026년 4월 20일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 + | ₩520.76 | ₩1,301,900.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-936
- 제조사 부품 번호:
- STD12NF06T4
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET II | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 30W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET II | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 30W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters for telecom and computer applications.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
관련된 링크들
- STMicroelectronics STripFET II Type N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 STD12NF06T4
- STMicroelectronics STripFET II Type N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 STD12NF06LT4
- STMicroelectronics STripFET II Type N-Channel MOSFET, 35 A, 60 V Enhancement, 3-Pin TO-252 STD35NF06LT4
- STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-252 STD60NF06T4
- STMicroelectronics STripFET II Type N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET II Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-252 STD17NF25
- STMicroelectronics STripFET II Type N-Channel MOSFET, 35 A, 60 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-252