STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 21 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH13N120K5-2AG
- RS 제품 번호:
- 151-913
- 제조사 부품 번호:
- STH13N120K5-2AG
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 1000 units)*
₩12,423,040.00
일시적 품절
- 2026년 4월 28일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 + | ₩12,423.04 | ₩12,422,476.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-913
- 제조사 부품 번호:
- STH13N120K5-2AG
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | MDmesh K5 | |
| Package Type | H2PAK-2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.69Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 44.2nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.7mm | |
| Length | 15.8mm | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series MDmesh K5 | ||
Package Type H2PAK-2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.69Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 44.2nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Height 4.7mm | ||
Length 15.8mm | ||
Width 10.4 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.
AEC Q101 qualified
Industry’s lowest RDS(on) x area
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
Zener protected
관련된 링크들
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 21 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH13N120K5-2AG
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 1.5 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH2N120K5-2AG
- STMicroelectronics MDmesh Type N-Channel MOSFET, 2.5 A, 1500 V Enhancement, 3-Pin H2PAK STH3N150-2
- STMicroelectronics N-Channel STH65N Type N-Channel MOSFET, 51 A, 650 V Enhancement, 7-Pin H2PAK-7 STH65N050DM9-7AG
- STMicroelectronics STB37N60 Type N-Channel MOSFET, 12 A, 1200 V Enhancement, 3-Pin H2PAK STH12N120K5-2
- STMicroelectronics Type N-Channel MOSFET, 7 A, 1200 V Enhancement, 3-Pin Tape & Reel STH12N120K5-2AG
- STMicroelectronics N-Channel STH65N Type N-Channel MOSFET, 51 A, 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics MDmesh Type N-Channel MOSFET, 2.5 A, 1500 V Enhancement, 3-Pin H2PAK