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STMicroelectronics MDmesh K5 N channel-Channel Power MOSFET, 6 A, 1200 V Enhancement Mode, 3-Pin H2PAK-2 ST2H8N120K5AG

RS 제품 번호:: 814-401
제조사 부품 번호:: ST2H8N120K5AG
제조업체:: STMicroelectronics

STMicroelectronics MDmesh K5 N channel-Channel Power MOSFET, 6 A, 1200 V Enhancement Mode, 3-Pin H2PAK-2 ST2H8N120K5AG

Subtotal (1 reel of 1000 units)*

₩5,886,000.00

일시적 품절

2026년 12월 02일 부터 배송

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수량	한팩당	릴당*
1000 +	₩5,886.00	₩5,886,200.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 814-401
제조사 부품 번호:: ST2H8N120K5AG
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	Power MOSFET
	Channel Type	N channel
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	H2PAK-2
	Series	MDmesh K5
	Mount Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.65Ω
	Channel Mode	Enhancement Mode
	Maximum Power Dissipation Pd	165W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	10.98mm
	Width	10.98mm
	Height	15.55mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Product Type Power MOSFET
	Channel Type N channel
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 1200V
	Package Type H2PAK-2
	Series MDmesh K5
	Mount Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.65Ω
	Channel Mode Enhancement Mode
	Maximum Power Dissipation Pd 165W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 10.98mm
	Width 10.98mm
	Height 15.55mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - ST2H8N120K5AG

COO (Country of Origin):: CN

The STMicroelectronics N channel power MOSFET delivers reliable High voltage performance for demanding applications, ensuring optimal efficiency and power density in automotive environments.

Automotive-grade, AEC-Q101 qualified for enhanced reliability

Ultra-low gate charge and very low figure of merit for reduced power loss

1200 V maximum drain-source voltage with a maximum drain current of 6 A

Designed with Advanced MDmesh K5 technology for superior thermal performance

STMicroelectronics MDmesh K5 N channel-Channel Power MOSFET, 6 A, 1200 V Enhancement Mode, 3-Pin H2PAK-2 ST2H8N120K5AG

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