STMicroelectronics SuperMESH3 Type N-Channel MOSFET, 1.8 A, 400 V Enhancement, 4-Pin SOT-223 STN3N40K3
- RS 제품 번호:
- 151-444
- 제조사 부품 번호:
- STN3N40K3
- 제조업체:
- STMicroelectronics
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Subtotal (1 reel of 4000 units)*
₩1,496,480.00
일시적 품절
- 2026년 5월 19일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 4000 + | ₩374.12 | ₩1,494,224.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-444
- 제조사 부품 번호:
- STN3N40K3
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | SuperMESH3 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 3.4Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series SuperMESH3 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 3.4Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.8mm | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is the result of improvements applied to Super MESH technology, combined with a new optimized vertical structure. This device boasts an extremely low on resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery characteristics
Zener protected
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