STMicroelectronics SuperMESH Type N-Channel MOSFET, 300 mA, 600 V Enhancement, 4-Pin SOT-223 STN1NK60Z
- RS 제품 번호:
- 151-928
- Distrelec 제품 번호:
- 304-37-475
- 제조사 부품 번호:
- STN1NK60Z
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tape of 20 units)*
₩11,700.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 20 - 180 | ₩585.00 | ₩11,700.00 |
| 200 - 480 | ₩553.80 | ₩11,095.50 |
| 500 - 980 | ₩514.80 | ₩10,296.00 |
| 1000 - 1980 | ₩473.85 | ₩9,477.00 |
| 2000 + | ₩456.30 | ₩9,106.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-928
- Distrelec 제품 번호:
- 304-37-475
- 제조사 부품 번호:
- STN1NK60Z
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperMESH | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 15Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 4.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperMESH | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 15Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 4.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.7mm | ||
Height 1.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
SD improved capability
Zener protected
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