제조사부품번호

Infineon IKW30N60TFKSA1, Type N-Channel IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

RS 제품 번호:: 897-7185
제조사 부품 번호:: IKW30N60TFKSA1
제조업체:: Infineon

Infineon IKW30N60TFKSA1, Type N-Channel IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

₩11,712.40

재고있음

추가로 2026년 2월 16일 부터 2 개 단위 배송
추가로 2026년 2월 23일 부터 92 개 단위 배송

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수량	한팩당	한팩당*
2 +	₩5,856.20	₩11,712.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 897-7185
제조사 부품 번호:: IKW30N60TFKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	45A
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	187W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.05V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Series	TrenchStop
	Standards/Approvals	JEDEC, Pb-Free, RoHS
	Automotive Standard	No
	Energy Rating	2.1mJ

	모두 선택
	브랜드 Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 45A
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 187W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.05V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Series TrenchStop
	Standards/Approvals JEDEC, Pb-Free, RoHS
	Automotive Standard No
	Energy Rating 2.1mJ

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IKW30N60TFKSA1, Type N-Channel IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

Infineon TrenchStop IGBT Transistors, 600 and 650V

IGBT Discretes & Modules, Infineon

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