Infineon IKW50N60DTPXKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 133-9871
- 제조사 부품 번호:
- IKW50N60DTPXKSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩5,358.00
재고있음
- 추가로 2026년 1월 26일 부터 33 개 단위 배송
- 추가로 2026년 2월 02일 부터 124 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 59 | ₩5,358.00 |
| 60 - 119 | ₩5,226.40 |
| 120 + | ₩5,151.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 133-9871
- 제조사 부품 번호:
- IKW50N60DTPXKSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 319.2 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 30kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Gate Capacitance | 1950pF | |
| Energy Rating | 2.38mJ | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 319.2 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 30kHz | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Gate Capacitance 1950pF | ||
Energy Rating 2.38mJ | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- CN
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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