Infineon IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

모든 IGBTs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩124,644.00

Add to Basket
수량 선택 또는 입력
재고있음
  • 추가로 2026년 1월 26일 부터 90 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
Per Tube*
30 - 120₩4,154.80₩124,627.08
150 +₩3,739.32₩112,162.68

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
124-8809
제조사 부품 번호:
IKW30N60TFKSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Maximum Continuous Collector Current

45 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

187 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Gate Capacitance

1630pF

Minimum Operating Temperature

-40 °C

Energy Rating

2.1mJ

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

관련된 링크들