STMicroelectronics STGB10NB37LZT4, Type N-Channel IGBT, 10 A 375 V, 3-Pin TO-263, Surface
- RS 제품 번호:
- 686-8341
- 제조사 부품 번호:
- STGB10NB37LZT4
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩9,633.00
마지막 RS 재고
- 최종적인 130 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 248 | ₩4,816.50 | ₩9,633.00 |
| 250 - 498 | ₩4,699.50 | ₩9,399.00 |
| 500 + | ₩4,631.25 | ₩9,262.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 686-8341
- 제조사 부품 번호:
- STGB10NB37LZT4
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 10A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 375V | |
| Maximum Power Dissipation Pd | 125W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 8μs | |
| Maximum Gate Emitter Voltage VGEO | 12 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Length | 28.9mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 10A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 375V | ||
Maximum Power Dissipation Pd 125W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 8μs | ||
Maximum Gate Emitter Voltage VGEO 12 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Length 28.9mm | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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