STMicroelectronics STGB3NC120HDT4, Type N-Channel IGBT, 14 A 1200 V, 3-Pin TO-263, Surface
- RS 제품 번호:
- 151-940
- 제조사 부품 번호:
- STGB3NC120HDT4
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tape of 5 units)*
₩16,995.20
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 5 - 45 | ₩3,399.04 | ₩16,995.20 |
| 50 - 95 | ₩3,226.08 | ₩16,130.40 |
| 100 - 495 | ₩2,989.20 | ₩14,946.00 |
| 500 + | ₩2,752.32 | ₩13,761.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-940
- 제조사 부품 번호:
- STGB3NC120HDT4
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 14A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 15ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.4 mm | |
| Length | 16mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 14A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 15ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.4 mm | ||
Length 16mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT shows an excellent trade off between low conduction losses and fast switching performance. It is designed in Power MESH technology combined with high voltage ultrafast diode.
High voltage capability
High speed
Very soft ultrafast recovery anti parallel diode
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