STMicroelectronics, Type N-Channel IGBT, 30 A 420 V, 3-Pin TO-263, Surface
- RS 제품 번호:
- 168-7861
- 제조사 부품 번호:
- STGB18N40LZT4
- 제조업체:
- STMicroelectronics
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Subtotal (1 reel of 1000 units)*
₩2,586,880.00
재고있음
- 1,000 개 단위 배송 준비 완료
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 - 4000 | ₩2,586.88 | ₩2,586,504.00 |
| 5000 + | ₩2,534.24 | ₩2,534,804.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 168-7861
- 제조사 부품 번호:
- STGB18N40LZT4
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 420V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Series | Automotive Grade | |
| Height | 4.6mm | |
| Width | 9.35 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 420V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Series Automotive Grade | ||
Height 4.6mm | ||
Width 9.35 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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